Comparative simulation study between n- type and p- type Silicon Solar Cells and the variation of efficiency of n- type Solar Cell by the application of passivation layer with different thickness using AFORS HET and PC1D
نویسندگان
چکیده
In this paper, comparative study of p type and n type solar cells are described using two popular solar cell analyzing software AFORS HET and PC1D. We use SiNx layer as Antireflection Coating and a passivated layer Al2O3 .The variation of reflection, absorption, I-V characteristics, and internal and external quantum efficiency have been done by changing the thickness of passivated layer and ARC layer, and front and back surface recombination velocities. The same analysis is taken by imposing surface charge at front of n-type solar Cell and we get 20.13%-20.15% conversion efficiency.
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